Oblast zaměření: Polovodiče
Komise : IEC/TC 47 (Semiconductor devices)
K připomínkám do: 6.06.2018
Zobraz více Zobraz méně

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The tests described herein are applicable to integrated circuits and discrete semiconductor devices. It is a destructive test.

The objectives of the test are as follows:

a)  to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and

b)  to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).